P-Channel Enhancement Mode MOSFET

Copyright

 ANPEC Electronics Corp.

Rev. A.1 - Sep., 2003

APM4429

www.anpec.com.tw

1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

Portable Equipment and Battery Powered

Systems

SO − 8

R

R

Symbol

Parameter

Rating

Unit

Drain-Source Voltage

-30

Gate-Source Voltage

±20

V

-13

Maximum Drain Current – Pulsed

-50

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.



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P-Channel MOSFET

G

D

S

S

S

DD D

A PM 4429

H andling C ode

Te m p . R a ng e

P a ckage C ode

P a ckage C ode

K : S O -8

O peration Junction T e m p . R ange

C : -5 5 to 1 5 0°C

H andling C ode

T U : T u b e

T R : T ape & R eel

Lead F ree C ode

L : Lead F ree D evic e

B land : O rg inal D evice

A P M 4429 K :

A P M 4429

XXXX X

XXXX X - D a te C o d e

Lead F ree C ode