AP13P15GP datasheet(4/4 Pages) A-POWER

No. de pieza	AP13P15GP

Descripción Electrónicos	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	A-POWER [Advanced Power Electronics Corp.]

Página de inicio	http://www.a-power.com.tw

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

4/4

AP13P15GS/P

-10V

QGS

QGD

Charge

10203040

Q G , Total Gate Charge (nC)

I D = -7A

V DS = -120V

100

1000

10000

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =-5V

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

0.1

100

1000

-V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

100us

1ms

10ms

100ms

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