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NTMFS4922NET1G Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza NTMFS4922NET1G
Descripción Electrónicos  Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL
PDF  8 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTMFS4922NET1G Datasheet(HTML) 3 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
13.2
ns
Rise Time
tr
33.3
Turn−Off Delay Time
td(OFF)
49.7
Fall Time
tf
7.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.79
1.0
V
TJ = 125°C
0.65
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
59.1
ns
Charge Time
ta
28.3
Discharge Time
tb
30.8
Reverse Recovery Charge
QRR
70
nC
PACKAGE PARASITIC VALUES
Source Inductance
LS
TA = 25°C
1.00
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
0.55
W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.



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