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TC35680FSG Datasheet(PDF) 68 Page - Toshiba Semiconductor

No. de pieza TC35680FSG
Descripción Electrónicos  TC35680FSG-002/TC35681FSG-002 Bluetooth® Low Energy IC
PDF  91 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC35680FSG Datasheet(HTML) 68 Page - Toshiba Semiconductor

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TC35680FSG-002/TC35681FSG-002
68
2019-04-04
5.
Electrical Characteristics (TC35680FSG/TC35681FSG)
5.1. Absolute Maximum Ratings
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not be exceeded during
operation, even for an instant. If any of these ratings would be exceeded during operation, the electrical characteristics of the device
may be irreparably altered, and the reliability and lifetime of the device can no longer be guaranteed. Moreover, these operations with
exceeded ratings may cause break-down, damage and/or degradation to any other equipment. Applications using the device should
be designed such that each absolute maximum rating will never be exceeded in any operating conditions.
Table 5-1 Absolute maximum ratings (VSSA = VSSRFIO = VSSDC = VSSD = VSSX = 0 V)
Note 1: Do not connect the VBAT pin to GND while the VDDIO pin is supplied with power. The current flow from the VDDIO pin to
the VBAT pin in the device may cause damage, break-down, and/or degradation.
Please make sure that the VDDIO voltage should never exceed the VBAT voltage.
Note 2: VDDIO + 0.3 V should never exceed 3.9 V.
Item
Symbol
Rating
Unit
Min.
Max.
Power supply voltage
VBAT and VDDIO (Note 1)
-0.3
+3.9
V
I/O pin input voltage
VIN
-0.3
VDDIO + 0.3
(Note 2)
V
I/O pin input current
IIN
-10
+10
mA
Input power
RFIO
—
+10
dBm
Storage temperature
Tstg
-40
+125
°C



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