WFF634 datasheet(3/7 Pages) WISDOM

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Typical Characteristics

DS = 125V

DS = 50V

DS = 200V

Note : I

※

D = 8.1 A

G, Total Gate Charge [nC]

-1

500

1000

1500

oss

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f = 1 MHz

rss

iss

DS, Drain-Source Voltage [V]

0.20.4

0.60.8

1.01.2

1.41.6

-1

150℃

Notes :

※

1. V

GS = 0V

2. 250µs PulseTest

25℃

SD, Source-Drain voltage [V]

0.0

0.5

1.0

1.5

2.0

2.5

GS = 20V

GS = 10V

Note : T

※

J = 25℃

D, Drain Current [A]

246

-1

150

-55

Notes :

※

1. V

DS = 40V

2. 250µs PulseTest

GS, Gate-Source Voltage [V]

-1

Top:

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom: 5.0V

Notes :

※

1. 250µs Pulse Test

2. T

C = 25℃

DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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