1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameters

Value

Unit

IT(RMS)

On-state RMS current (180° conduction angle)

TC = 41 °C

0.8

A

IT(AV)

Average on-state current (180° conduction angle)

0.5

A

ITSM

Non repetitive surge peak on-state current

(Tj initial = 25 °C)

tp = 8.3 ms

Tj = 25 °C

7.6

A

tp = 10 ms

7

One surge every 500 ms, 50 surges

tp = 8.3 ms

TAMB = 105 °C

5

I2t

I2t value for fusing

tp = 10 ms

Tj = 25 °C

0.25

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

f = 60 Hz

Tj = 25 °C

75

A/µs

VDRM / VRRM Repetitive peak off-state voltage

Tj = 125 °C

600

V

VDSM / VRSM Non repetitive surge peak off-state voltage

tp = 10 ms

Tj = 25 °C

750

V

IGM

Peak forward gate current

tp = 20 µs

Tj = 125 °C

1.2

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.2

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Parameters

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

Min.

30

µA

Max.

150

VGT

Max.

0.8

V

VGD

VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C

Min.

0.2

V

VRG

IRG = 10 µA

Min.

5

V

IH

IT = 50 mA, gate open, RGK = 1 kΩ

Max.

5

mA

IL

IG = 1.2 IGT, RGK = 1 kΩ

Max.

6

mA

dV/dt

VD = 67 % VDRM, gate open, RGK = 1 kΩ, Tj = 125 °C

Min.

80

V/µs

Table 3. Static characteristics

Symbol

Test conditions

Value

Unit

VTM

ITM = 1.6 A, tp = 380 µs

Tj = 25 °C

Max.

1.7

V

VTO

Threshold on-state voltage

Tj = 125 °C

Max.

1.06

V

Rd

Dynamic resistance

Tj = 125 °C

Max.

540

mΩ

IDRM / IRRM

VT = VDRM, VT = VRRM, RGK = 1 kΩ

Tj = 25 °C

Max.

1

µA

Tj = 125 °C

150

µA

X0115ML

Characteristics

DS13776 - Rev 3

page 2/10