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STF18N65DM2 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STF18N65DM2
Descripción Electrónicos  N-channel 650 V, 231 m typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package
PDF  12 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF18N65DM2 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG100520211029SOA
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp=10 µs
tp=1 µs
tp=100 µs
tp=1 ms
IDM
single pulse
TC = 25 °C
TJ ≤ 150 °C
V(BR)DSS
RDS(on) max.
tp=10 ms
Figure 2. Maximum transient thermal impedance
GADG100520211030ZTH
10 0
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Single pulse
duty=0.5
ton
T
duty = ton / T
RthJC = 4.5 °C/W
ZthJC
(°C/W)
0.05
2
4
3
Figure 3. Typical output characteristics
GADG100520211024OCH
35
30
25
20
15
10
5
0
0
5
10
15
20
ID
(A)
VGS (V)
VGS = 5 V
VGS = 6 V
VGS = 8, 9, 10 V
VGS = 7 V
Figure 4. Typical transfer characteristics
GADG100520211027TCH
35
30
25
20
15
10
5
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Typical gate charge characteristics
GADG100520211027QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
4
8
12
16
20
24
VDS
(V)
VGS
(V)
Qg (nC)
ID = 12 A
VDD =520 V
Figure 6. Typical drain-source on-resistance
GADG100520211021RID
245
240
235
230
225
220
0
2
4
6
8
10
12
RDS(on)
(mΩ)
ID (A)
VGS =10 V
STF18N65DM2
Electrical characteristics (curves)
DS12957 - Rev 2
page 5/12



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