STWA63N65DM2 datasheet(1/12 Pages) STMICROELECTRONICS

No. de pieza	STWA63N65DM2

Descripción Electrónicos	N-channel 650 V, 0.042 typ., 60 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Features

Order code

VDS

RDS(on) max.

ID

PTOT

STWA63N65DM2

650 V

0.050 Ω

60 A

446 W

•

Fast-recovery body diode

•

Extremely low gate charge and input capacitance

•

Low on-resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast

recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined

with low RDS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STWA63N65DM2

Product summary

Order code

STWA63N65DM2

Marking

63N65DM2

Package

TO-247 long leads

Packing

Tube

N-channel 650 V, 0.042 Ω typ., 60 A MDmesh™ DM2 Power MOSFET in a

TO-247 long leads package

STWA63N65DM2

Datasheet

DS12555 - Rev 1 - April 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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