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STP50N65DM6 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STP50N65DM6
Descripción Electrónicos  N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
PDF  11 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STP50N65DM6 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
33
A
ISDM (1)
Source-drain current (pulsed)
-
120
A
VSD (2)
Forward on voltage
VGS = 0 V, ISD = 33 A
-
1.6
V
trr
Reverse recovery time
ISD = 33 A, di/dt = 100 A/µs,VDD = 60 V
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
130
ns
Qrr
Reverse recovery charge
-
0.65
µC
IRRM
Reverse recovery current
-
10
A
trr
Reverse recovery time
ISD = 33 A, di/dt = 100 A/µs VDD = 60 V,
Tj = 150 °C (see Figure 15. Test circuit
for inductive load switching and diode
recovery times)
-
226
ns
Qrr
Reverse recovery charge
-
2.32
µC
IRRM
Reverse recovery current
-
20.6
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
STP50N65DM6
Electrical characteristics
DS12360 - Rev 4
page 4/11



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