STP35N65DM2 datasheet(1/13 Pages) STMICROELECTRONICS

No. de pieza	STP35N65DM2

Descripción Electrónicos	N-channel 650 V, 0.093 typ., 32 A MDmesh™ DM2 Power MOSFET in a TO-220 package

PDF	13 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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December 2017

DocID030872 Rev 2

1/13

This is information on a product in full production.

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STP35N65DM2

N-

channel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max.

ID

PTOT

STP35N65DM2

650

V

0.110 Ω

32

A

250

W



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part

of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP35N65DM2

35N65DM2

TO-220

Tube

1

2

3

TO-220

TAB

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STP35N65DM2 Datasheet(PDF) 1 Page - STMicroelectronics

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