©2012

Semiconductor Components Industries, LLC.

November-2017, Rev 3

Publication Order Number:

FDPF18N50T/D

FDP18N50 / FDPF18N50 / FDPF18N50T

N-Channel UniFETTM MOSFET

500 V, 18 A, 265 m

Ω

Features

•RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A

• Low Gate Charge (Typ. 45 nC)

• Low Crss (Typ. 25 pF)

• 100% Avalanche Tested

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

Description

UniFETTM

MOSFET is

ON Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

Absolute Maximum Ratings T

C = 25°C unless otherwise noted.

Thermal Characteristics

Symbol

Parameter

FDP18N50

FDPF18N50 /

FDPF18N50T

Unit

VDSS

Drain-Source Voltage

500

V

ID

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

18

10.8

18 *

10.8 *

A

A

IDM

Drain Current

- Pulsed

(Note 1)

72

72 *

A

VGSS

Gate-Source voltage

±30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

945

mJ

IAR

Avalanche Current

(Note 1)

18

A

EAR

Repetitive Avalanche Energy

(Note 1)

23.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation

(TC = 25°C)

- Derate Above 25

°C

235

1.88

38.5

0.3

W

W/

°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

FDP18N50

FDPF18N50 /

FDPF18N50T

Unit

RθJC

Thermal Resistance, Junction-to-Case, Max.

0.53

3.3

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5

62.5

°C/W

* Drain current limited by maximum junction temperature

TO-220

G

DS

TO-220F

G

DS

G

S

D