YFW12H02TS datasheet(4/6 Pages) YFWDIODE

No. de pieza	YFW12H02TS

Descripción Electrónicos	20V NN-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Página de inicio	http://www.yfwdiode.com/

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YFW12H02TS

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GuangDong YFW Electronics Co, Ltd.

Ratings and Characteristic Curves

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

0.02

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.1

100

0.01

0.1

100

V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

10us

100us

1ms

10ms

Q G , Total Gate Charge (nC)

I D =20 A

V DS =10V

400

800

1200

1600

2000

2400

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

012

V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =5V

T j = -55

o C

Operation in this area

limited by RDS(ON)

4.5V

QGS

QGD

Charge

Rev:2021Y1

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