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ESD341 Datasheet(PDF) 4 Page - Texas Instruments

No. de pieza ESD341
Descripción Electrónicos  ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package
PDF  17 Pages
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Fabricante Electrónico  TI [Texas Instruments]
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ESD341 Datasheet(HTML) 4 Page - Texas Instruments

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6 Specifications
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Peak Pulse (2) (3)
IEC 61000-4-5 power (tp - 8/20 µs)
54
W
IEC 61000-4-5 Current (tp - 8/20 µs)
5.4
A
TA
Ambient Operating Temperature
-40
125
°C
TJ
Junction Temperature
-40
125
°C
Tstg
Storage Temperature
-65
155
°C
(1)
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not
sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,
performance, and shorten the device lifetime.
(2)
Voltages are with respect to GND unless otherwise noted.
(3)
Measured at 25
6.1 ESD Ratings—JEDEC Specification
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001
±2500
V
Charged device model (CDM), per JEDEC
specification JS-002
±1000
V
6.2 ESD Ratings—IEC Specification
VALUE
UNIT
V(ESD)
Electrostatic discharge
IEC 61000-4-2 contact discharge
±30000
V
IEC 61000-4-2 air-gap discharge
±30000
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIO
Input pin voltage
Pin 1 to 2 or Pin 2 to 1
-3.6
3.6
V
TA
Operating free-air temperature
-40
125
°C
6.3 Thermal Information
THERMAL METRIC (1)
ESD341
UNIT
DPL (X2SON)
2 PINS
RθJA
Junction-to-ambient thermal resistance
356.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
208.8
°C/W
RθJB
Junction-to-board thermal resistance
136.2
°C/W
ΨJT
Junction-to-top characterization parameter
3.0
°C/W
ΨJB
Junction-to-board characterization parameter
135.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
NA
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
ESD341
SLVSGV3A – APRIL 2022 – REVISED JULY 2022
www.ti.com
4
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Product Folder Links: ESD341



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