MJD42C-Q datasheet(5/10 Pages) NEXPERIA

No. de pieza	MJD42C-Q

Descripción Electrónicos	100 V, 6 A PNP high power bipolar transistor

PDF	10 Pages

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Fabricante Electrónico	NEXPERIA [Nexperia B.V. All rights reserved]

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MJD42C-Q

100 V, 6 A PNP high power bipolar transistor

aaa-033349

IC (mA)

-1

-104

-103

-10

-102

-0.4

-0.8

-1.2

VBE

(V)

(1)

(2)

(3)

VCE = -4 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 5. Base-emitter voltage as a function of collector

current; typical values

aaa-033350

IC (mA)

-1

-104

-103

-10

-102

-0.4

-0.8

-1.2

VBEsat

(V)

(1)

(2)

(3)

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 6. Base-emitter saturation voltage as a function of

collector current; typical values

aaa-033351

IC (mA)

-1

-104

-103

-10

-102

-10-2

-10-1

-1

-10

VCEsat

(V)

-10-3

(1)

(3)

(2)

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 7. Collector-emitter saturation voltage as a

function of collector current; typical values

IB (A)

-10-3

-1

-10-1

-10-2

aaa-033352

-0.8

-1.2

-0.4

-1.6

-2.0

VCEsat

(V)

(1)

(2)

(3)

Tamb = 25 °C

(1) IC = -1 A

(2) IC = -2.5 A

(3) IC = -5 A

Fig. 8. Collector-emitter saturation region as a function

of base current; typical values

MJD42C-Q

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Product data sheet

8 June 2021

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