4805 datasheet(1/6 Pages) TUOFENG

No. de pieza	4805

Descripción Electrónicos	P-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Fabricante Electrónico	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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P-Channel Enhancement Mode Power MOSFET

Description

The 4805 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

VDS = -30V,ID = - 8.0A

RDS(ON)typ 17mΩ @ VGS= -10V

RDS(ON)typ 22mΩ @ VGS= -4.5V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Schematic diagram

Marking and pin assignment

SOP-8

top view

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

www.sztuofeng.com

G1

D1

S1

G2

D2

S2

Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

48

62.5

74

110

RθJL

35

40

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±20

Gate-Source Voltage

Drain-Source Voltage

-30

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

-30

Pulsed Drain CurrentB

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

2

1.3

-55 to 150

TA=70°C

ID

- 9

4805

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4805 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

4805 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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