TF2369 datasheet(4/7 Pages) TUOFENG

No. de pieza	TF2369

Descripción Electrónicos	P-Channel 30-V(D-S) MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Página de inicio	http://www.sztuofeng.com/?lang=en

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TF2369

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-3LPlastic-Encapsulate MOSFETS

www.sztuofeng.com

,2018 V1.0

Mar

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.3

0.6

0.9

1.2

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

1.25

1.5

1.75

- 50

- 25

100

125

150

J - Temperature (°C)

D = 250 μA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.000

0.020

0.040

0.060

0.080

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 5.4 A

0.01

0.1

100

1000

Time (s)

TA =25 °C

Safe Operating Area, Junction-to-Ambient

0.001

0.01

0.1

100

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by RDS(on)*

1 ms

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

10s, 1 s

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