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SAMWIN
SW640
REV0.2
05.6.9
3/6
Fig 1. On-State Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 2. Transfer Characteristics
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitve)
2
4
6
8
10
0.1
1
10
25
oC
150
oC
∗
∗
∗
∗
Note:
1.V
DS
=50V
2.250us pulse test.
V
GS
, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
150
oC
25
oC
V
SD
,Source-Drain Voltage[V]
∗
∗
∗
∗
Note:
1.v
GS
=0v
2.250us test
0
10
20
30
40
50
0
2
4
6
8
10
12
Note:I
D
=18A
Q
G
,Total Gate Charge [nC]
V
DS
=160V
V
DS
=100V
V
DS
=40V
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
=10V
V
GS
=20V
∗
∗
∗
∗
Note:T
J
=25
o
C
I
D
, Drain Current[A]
0.1
1
10
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
V
DS
,Drain-Source Voltage [V]
C
rss
C
oss
C
iss
∗
∗
∗
∗
Note:
1.V
GS
=0V
2.f=1MHz.
Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd
Crss = Cgd
0.1
1
10
0.1
1
10
V
DS
,Drain-to-Source voltage [V]
∗
∗
∗
∗
Note:
1.250us pulse test
2.T
C
=
25oC
VGS
top:10V
9V
8V
7V
6V
5.5V
5V
bottom:5.0V
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