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AS4LC4M4F1 Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

No. de pieza AS4LC4M4F1
Descripción Electrónicos  4M횞4 CMOS DRAM (Fast Page) 3.3V Family
PDF  14 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC4M4F1 Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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AS4LC4M4F1
5/16/01; v.1.0 Restored
Alliance Semiconductor
P. 6 of 14
®
Fast page mode cycle
Output enable
Self-refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCPA
Access time from CAS precharge
–
28
–
35
13
tRASP
RAS
pulse width
50
100K
60
100K
tPC
Read-write cycle time
30
–
35
–
tCP
CAS
precharge time (fast page)
10
–
10
–
tPCM
Fast page mode RMW cycle
80
–
85
–
tCRW
Page mode CAS pulse width (RMW)
12
–
15
–
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCLZ
CAS to output in Low Z
0
–
0
–
ns
8
tROH
RAS hold time referenced to OE
8–
10
–
ns
tOEA
OE access time
–
13
–
15
ns
tOED
OE to data delay
13
–
15
–
ns
tOEZ
Output buffer turnoff delay from OE
0130
15
ns
8
tOEH
OE command hold time
10
–
10
–
ns
tOLZ
OE to output in Low Z
0
–
0
–
ns
tOFF
Output buffer turn-off time
0
13
0
15
ns
8,10
Std Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRASS
RAS
pulse width (CBR self refresh)
100
-
100
-
µs
15
tRPS
RAS
precharge time (CBR self refresh)
90
-
105
-
ns
tCHS
CAS
hold time (CBR self refresh)
8
-
10
-
nx



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