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AS4LC4M4F1 Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation

No. de pieza AS4LC4M4F1
Descripción Electrónicos  4M횞4 CMOS DRAM (Fast Page) 3.3V Family
PDF  14 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC4M4F1 Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation

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AS4LC4M4F1
5/16/01; v.1.0 Restored
Alliance Semiconductor
P. 3 of 14
®
Absolute maximum ratings
DC electrical characteristics
Parameter
Symbol
Min
Max
Unit
Input voltage
Vin
-1.0
4.6
V
Input voltage (DQs)
VDQ
-1.0
4.6
V
Power supply voltage
VCC
-1.0
4.6
V
Storage temperature (plastic)
TSTG
-55
150
°C
Soldering temperature × time
TSOLDER
260 × 10
oC × sec
Power dissipation
PD
0.432
W
Short circuit output current
Iout
–50
mA
Parameter
Symbol
Test conditions
-50
-60
Unit
Notes
Min
Max
Min
Max
Input leakage current
IIL
0V
≤ V
in ≤ +Vcc(max)
Pins not under test = 0V
-5
+5
-5
+5
µA
Output leakage current
IOL
DOUT disabled, 0V ≤ Vout ≤ + Vcc(max)
-5
+5-5+5
µA
Operating power
supply current
ICC1
CAS, Address cycling; tRC=min
120
110
mA
1,2
TTL standby power
supply current
ICC2
RAS = CAS
≥ V
IH
2.0
2.0
mA
Average power supply
current, RAS refresh
mode or CBR
ICC3
RAS cycling, CAS
≥ V
IH,
tRC = min of RAS low after CAS low.
120
110
mA
1
Fast page mode average
power supply current
ICC4
RAS = VIL, CAS,
address cycling: tHPC = min
90
80
mA
1, 2
CMOS standby power
supply current
ICC5
RAS = CAS = VCC - 0.2V
2.0
2.0
mA
Output voltage
VOH
IOUT = -2.0 mA
2.4
2.4
V
VOL
IOUT = 2.0 mA
0.4
0.4
V
CAS before RAS refresh
current
ICC6
RAS, CAS cycling, tRC = min
120
110
mA
Self refresh current
ICC7
RAS
= CAS
≤ 0.2v,
WE
- OE
≥ V
CC - 0.2V,
all other inputs at 0.2V or VCC - 0.2V
-
0.6
-
0.6
mA



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