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FDPC8016S Datasheet(PDF) 7 Page - ON Semiconductor

No. de pieza FDPC8016S
Descripción Electrónicos  MOSFET - Dual N?륝hannel, Asymmetric, POWERTRENCH Power Clip 25 V
PDF  12 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDPC8016S Datasheet(HTML) 7 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS (Q1 N-Channel)
(TJ = 25°C unless otherwise noted)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
0
6
12
18
24
30
0
2
4
6
8
10
ID = 20 A
VDD = 15 V
VDD = 10 V
Qg, GATE CHARGE (nC)
VDD = 13 V
0.1
1
10
25
10
100
1000
10000
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.001
0.01
0.1
1
10
100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
25
50
75
100
125
150
0
10
20
30
40
50
60
70
VGS = 4.5 V
= 6.0 oC/W
VGS = 10 V
T
C, CASE TEMPERATURE (
oC
)
0.1
1
10
80
0.1
1
10
100
500
CURVE BENT TO
MEASURED DATA
10
10 ms
DC
100
1 ms
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
= 6.0
oC/W
TC = 25
oC
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
5000
SINGLE PULSE
= 6.0
oC/W
T
C = 25
oC
t, PULSE WIDTH (sec)
RqJC
RqJC
RqJC
ms
ms



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