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LM8S8P06 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

No. de pieza LM8S8P06
Descripción Electrónicos  -60V P-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Fabricante Electrónico  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Página de inicio  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM8S8P06 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃, unless otherwise noted)
Rev : 01.0 .2021
/
2 5
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS /△Tj
BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.03
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-12A
---
55
70
mΩ
VGS=-4.5V , ID=-8A
---
64
105
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
1.5
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4.56
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-12A
---
15.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13.5
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-48V , VGS=-4.5V , ID=-10A
---
9.86
---
nC
Qgs
Gate-Source Charge
---
3.08
---
Qgd
Gate-Drain Charge
---
2.95
---
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V ,
RG=3.3 ,
ID=-1A
---
28.8
---
ns
Tr
Rise Time
---
19.8
---
Td(off)
Turn-Off Delay Time
---
60.8
---
Tf
Fall Time
---
7.2
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
1447
---
pF
Coss
Output Capacitance
---
97.3
---
Crss
Reverse Transfer Capacitance
---
70
---
IS
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
-18
A
ISM
Pulsed Source Current2,5
---
---
-36
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note :
1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26.6A
4、The power dissipation is limited by 150℃ junction temperature
5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
LM8S8P06
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