NAND01GR3B datasheet(46/64 Pages) STMICROELECTRONICS

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DC And AC parameters

NAND01G-B, NAND02G-B

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DC And AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics Tables that

follow, are derived from tests performed under the Measurement Conditions summarized in

Table 20: Operating and AC Measurement Conditions. Designers should check that the

operating conditions in their circuit match the measurement conditions when relying on the

quoted parameters.

Table 20.

Operating and AC Measurement Conditions

Parameter

NAND Flash

Units

Min

Max

Supply Voltage (VDD)

1.8V devices

1.7

1.95

3V devices

2.7

3.6

Ambient Temperature (TA)

Grade 1

°C

Grade 6

–40

°C

Load Capacitance (CL)

(1 TTL GATE and CL)

1.8V devices

3V devices (2.7 - 3.6V)

Input Pulses Voltages

1.8V devices

VDD

3V devices

0.4

2.4

Input and Output Timing Ref. Voltages

1.8V devices

0.9

3V devices

1.5

Output Circuit Resistor Rref

8.35

Ω

Input Rise and Fall Times

Table 21.

Capacitance(1)

TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested

Symbol

Parameter

Test Condition

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0V

CI/O

Input/Output

Capacitance(2)

Input/output capacitances double in stacked devices

VIL = 0V

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