NAND01GR3B datasheet(45/64 Pages) STMICROELECTRONICS

No. de pieza	NAND01GR3B

Descripción Electrónicos	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

PDF	64 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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45 / 64 page

NAND01G-B, NAND02G-B

Maximum rating

45/64

Maximum rating

Stressing the device above the ratings listed in Table 19: Absolute Maximum Ratings, may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Table 19.

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Min

Max

TBIAS

Temperature Under Bias

– 50

125

°C

TSTG

Storage Temperature

– 65

150

°C

VIO

(1)

Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.

Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.

Input or Output Voltage

1.8V devices

– 0.6

2.7

3 V devices

– 0.6

4.6

VDD

Supply Voltage

1.8V devices

– 0.6

2.7

3 V devices

– 0.6

4.6

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