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M28F420 Datasheet(PDF) 10 Page - STMicroelectronics

No. de pieza M28F420
Descripción Electrónicos  4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
PDF  38 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28F420 Datasheet(HTML) 10 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
M28F410 / 20
Unit
-70
-80
-100
-120
VCC =5V
± 5% VCC =5V ± 10% VCC =5V ± 10% VCC =5V ± 10%
SRAM
Interface
EPROM
Interface
EPROM
Interface
EPROM
Interface
Min
Max
Min
Max
Min
Max
Min
Max
tAVAV
tRC
Address Valid to
Next Address Valid
70
80
100
120
ns
tAVQV
tACC
Address Valid to
Output Valid
70
80
100
120
ns
tPHQV
tPWH
Power Down High
to Output Valid
300
300
300
300
ns
tELQX
(2)
tLZ
Chip Enable Low to
Output Transition
000
0
ns
tELQV
(3)
tCE
Chip Enable Low to
Output Valid
70
80
100
120
ns
tGLQX
(2 )
tOLZ
Output Enable Low
to Output Transition
000
0
ns
tGLQV
(3 )
tOE
Output Enable Low
to Output Valid
35
40
45
50
ns
tEHQX
(2)
tOH
Chip Enable High
to Output Transition
000
0
ns
tEHQZ
(2 )
tHZ
Chip Enable High
to Output Hi-Z
25
30
35
35
ns
tGHQX
(2)
tOH
Output Enable High
to Output Transition
000
0
ns
tGHQZ
(2)
tDF
Output Enable High
to Output Hi-Z
25
30
35
35
ns
tAXQX
(2 )
tOH
Address Transition
to Output Transition
000
0
ns
Notes: 1. See Figure 3 and Table 8 for timing measurements.
2. Sampled only, not 100% tested.
3. G may be delayed by up to tELQV -tGLQV after the falling edge of E without increasing tELQV.
Table 13. Read AC Characteristics (1)
(TA = 0 to 70
°C or –40 to 85°C; VPP = 12V ± 5%)
10/38
M28F410, M28F420



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