DESCRIPTION
The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and TSOP56 packages are used.

■ DUAL x8 and x16 ORGANIZATION
■ SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44
■ MEMORY ERASE in BLOCKS
   – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection
   – Two 8K Byte or 4K Word Key Parameter Blocks
   – One 96K Byte or 48K Word Main Block
   – Three 128K Byte or 64K Word Main Blocks
■ 5V ± 10% SUPPLY VOLTAGE
■ 12V ± 5% PROGRAMMING VOLTAGE
■ 100,000 PROGRAM/ERASE CYCLES
■ PROGRAM/ERASE CONTROLLER
■ AUTOMATIC STATIC MODE
■ LOW POWER CONSUMPTION
   – 60μA Typical in Standby
   – 0.2μA Typical in Deep Power Down
   – 20/25mATypical Operating Consumption (Byte/Word)
■ HIGH SPEED ACCESS TIME: 70ns
■ EXTENDED TEMPERATURE RANGES