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2SD2139 Datasheet(PDF) 2 Page - Panasonic Semiconductor

No. de pieza 2SD2139
Descripción Electrónicos  Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)
PDF  3 Pages
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Fabricante Electrónico  PANASONIC [Panasonic Semiconductor]
Página de inicio  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2139 Datasheet(HTML) 2 Page - Panasonic Semiconductor

  2SD2139 Datasheet HTML 1Page - Panasonic Semiconductor 2SD2139 Datasheet HTML 2Page - Panasonic Semiconductor 2SD2139 Datasheet HTML 3Page - Panasonic Semiconductor  
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2
Power Transistors
2SD2139
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C=Ta
(2) Without heat sink
(P
C=2.0W)
(1)
(2)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
1.2
1.0
0.8
0.6
0.4
0.2
T
C=25˚C
I
B=1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
Collector to emitter voltage V
CE
(V)
02.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE=4V
T
C=100˚C
25˚C
–25˚C
Base to emitter voltage V
BE
(V)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=40
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
10
10000
1000
100
30
300
3000
V
CE=4V
25˚C
–25˚C
T
C=100˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
V
CE=12V
f=10MHz
T
C=25˚C
Collector current I
C
(A)
1
3
10
30
100
1
1000
100
10
3
30
300
I
E=0
f=1MHz
T
C=25˚C
Collector to base voltage V
CB
(V)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
t=10ms
1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)



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