2SD2139 datasheet(1/3 Pages) PANASONIC

No. de pieza	2SD2139

Descripción Electrónicos	Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

PDF	3 Pages

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

Página de inicio	http://www.panasonic.com/industrial/

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Power Transistors

2SD2139

Silicon NPN triple diffusion planar type

For high-current amplification ratio, power amplification

s Features

q

High foward current transfer ratio hFE

q

Satisfactory linearity of foward current transfer ratio hFE

q

Allowing supply with the radial taping

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

80

60

6

3

1

15

2

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Symbol

ICBO

ICEO

IEBO

VCEO

hFE

*

VCE(sat)

fT

Conditions

VCB = 80V, IE = 0

VCE = 40V, IB = 0

VEB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 0.5A

IC = 2A, IB = 0.05A

VCE = 12V, IC = 0.2A, f = 10MHz

min

60

500

typ

50

max

100

2500

1

Unit

µA

V

MHz

*h

FE Rank classification

Rank

Q

P

O

hFE

500 to 1000 800 to 1500 1200 to 2500

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

MT4 Type Package

1.0

10.0

±0.2

0.55

±0.1

2.5

±0.2

2.5

±0.2

5.0

±0.1

2.25

±0.2

1.2

±0.1

0.65

±0.1

0.55

±0.1

C1.0

90

°

C1.0

123

1.05

±0.1

0.35

±0.1

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2SD2139 Datasheet(PDF) 1 Page - Panasonic Semiconductor

2SD2139 Datasheet(HTML) 1 Page - Panasonic Semiconductor

Número de pieza similar - 2SD2139

Descripción similar - 2SD2139

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