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STM4635 Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

No. de pieza STM4635
Descripción Electrónicos  P-Channel 40 V (D-S) MOSFET
PDF  9 Pages
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Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STM4635 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
VGS =10Vthru5V
VGS =4V
VGS =3V
V
DS - Drain-to-Source Voltage (V)
0
0.006
0.012
0.018
0.024
0.030
0
10203040
50
VGS =10V
VGS =4.5 V
I
D - Drain Current (A)
0
2
4
6
8
10
0
14284256
70
ID = 10.2 A
VDS =20V
VDS =10V
VDS =32V
Q
g - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012
34
TC = - 55 °C
TC = 125 °C
TC = 25 °C
V
GS - Gate-to-Source Voltage (V)
Crss
0
900
1800
2700
3600
4500
0
8
16
24
32
40
Ciss
Coss
V
DS - Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
VGS =10.2V; ID =10.2 A
VGS =4.5 V; ID =8.4 A
T
J - Junction Temperature (°C)
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
STM4635
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