AS6VA25616-TC datasheet(5/9 Pages) ALSC

No. de pieza	AS6VA25616-TC

Descripción Electrónicos	2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ALSC [Alliance Semiconductor Corporation]

Página de inicio	https://www.alliancememory.com

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5 / 9 page

AS6VA25616

10/6/00

ALLIANCE SEMICONDUCTOR

Write cycle (over the operating range)11

Shaded areas indicate preliminary information.

Write waveform 1 (WE controlled)10,11

Write waveform 2 (CS controlled)10,11

Parameter

Symbol

Min

Max

Unit

Notes

Write cycle time

tWC

–

Chip select to write end

tCW

–

Address setup to write end

tAW

–

Address setup time

tAS

–

Write pulse width

tWP

–

Address hold from end of write

tAH

0–

Data valid to write end

tDW

–

Data hold time

tDH

0–

4, 5

Write enable to output in high Z

tWZ

020

4, 5

Output active from write end

tOW

5–

4, 5

UB/LB low to end of write

tBW

–

Address

LB, UB

DIN

DOUT

tWC

tCW

tBW

tAW

tAS

tWP

tDW

tDH

tOW

tWZ

tAH

Data undefined

High Z

Data valid

Address

LB, UB

DIN

tWC

tCW

tBW

tWP

tDW

tDH

tOW

tWZ

tAH

DOUT

Data undefined

High Z

tAS

tAW

Data valid

tCLZ

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