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AS6VA25616-TC Datasheet (PDF) - Alliance Semiconductor Corporation

AS6VA25616-TC Datasheet PDF - Alliance Semiconductor Corporation
No. de pieza AS6VA25616-TC
Descarga  AS6VA25616-TC Descarga
Tamaño del archivo   180.39 Kbytes
Page   9 Pages
Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Descripción Electrónicos 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

AS6VA25616-TC Datasheet (PDF)

Go To PDF Page Descarga Datasheet
AS6VA25616-TC Datasheet PDF - Alliance Semiconductor Corporation

No. de pieza AS6VA25616-TC
Descarga  AS6VA25616-TC Click to download

Tamaño del archivo   180.39 Kbytes
Page   9 Pages
Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation
Descripción Electrónicos 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

AS6VA25616-TC Datasheet (HTML) - Alliance Semiconductor Corporation


AS6VA25616-TC Detalles de producto

Functional description
The AS6VA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

Features
• AS6VA25616
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 262,144 words × 16 bits
• 2.7V to 3.3V at 55 ns
• Low power consumption: ACTIVE
    - 132 mW at 3.3V and 55 ns
• Low power consumption: STANDBY
    - 66 µW max at 3.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
    - 48-ball FBGA
    - 400-mil 44-pin TSOP II
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA




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