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UTT4407L-S08-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza UTT4407L-S08-R
Descripción Electrónicos  P-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT4407L-S08-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-30
-33
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-30V
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1
-1.5
-3
V
RDS(ON)
Drain-Source On Resistance
2
VGS=-10V,ID=-10A
---
11.5
15
mΩ
VGS=-4.5V,ID=-7A
---
18
25
GFS
Forward Transconductance
VDS= -10V, ID=-10A
20
---
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=-15V, VGS=0V, f=1MHz
---
1750
---
pF
Coss
Output Capacitance
---
215
---
Crss
Reverse Transfer Capacitance
---
180
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=-15V, ID=-10A,
VGS=-10V,RGEN=1Ω
---
9
---
ns
tr
Rise Time
---
8
---
ns
td(off)
Turn-Off Delay Time
---
28
---
ns
tf
Fall Time
---
10
---
ns
Qg
Total Gate Charge
VGS=-10V, VDS=-15V,
ID=-10A
---
24
---
nC
Qgs
Gate-Source
Charge
---
3.5
---
nC
Qgd
Gate-Drain “Miller” Charge
---
6
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=-2A
---
---
-1.2
V
UTT4407L-S08-R



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