UT4812G-S08-R datasheet(4/5 Pages) DOINGTER

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UT4812G-S08-R Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza	UT4812G-S08-R

Descripción Electrónicos	Dual N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Página de inicio	http://www.doingter.cn/

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Qg Gate Charge (nC)

Figure 5 Gate Charge

Vsd Source-Drain Voltage (V)

Figure 6 Source- Drain Diode Forward

Vds Drain-Source Voltage (V)

Figure 7 Capacitance vs Vds

Vds Drain-Source Voltage (V)

Figure 8 Safe Operation Area

TJ-Junction Temperature(℃)

Figure 9 Power Dissipation

TJ-Junction Temperature(℃)

Figure 10 Current De-rating

UT4812G-S08-R

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