UP9972L-TN3-R datasheet(4/4 Pages) DOINGTER

No. de pieza	UP9972L-TN3-R

Descripción Electrónicos	N-Channel MOSFET uses advanced trench technology

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Figure 7: Normalized Breakdown Voltage vs.

Junction Temperature

0.5

1.0

1.5

2.0

2.5

RDS

Figure 8: Normalized on Resistance vs.

Junction Temperature

Tj ( )

℃

VDS (V)

ID(A

)

0.1

100

0.1

Figure 9: Maximum Safe Operating Area

100

125

150

175

Figure 10: Maximum Continuous Drain Current

vs. Case Temperature

Tc ( )

℃

ID(A

)

1.0

1.3

Tj ( )

℃

VBR(DSS) (V)

-100

-50

100

150

200

0.9

1.1

1.2

-100

-50

100

150

200

100

10μs

100μs

1ms

10ms

100ms

Limited by RDS(on)

TC=25

℃

Single pulse

10-6

10 -5

10 -4

10 -3

10 -2 10 -1

10 0

10 1

10-2

Figure.11: Maximum Effective

Transient Thermal Impedance, Junction-to-Case

TP(s)

ZthJ-C(

℃/W)

10-1

100

101

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

Single pulse

Notes:

1.Duty factor D=t1/t2

2.Peak T J=PDM thJC+TC

10-3

1000

UP9972L-TN3-R

００８６－０７５５－８２７８－９０５６

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