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STS2DNF30L Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza STS2DNF30L
Descripción Electrónicos  Dual N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STS2DNF30L Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This Dual N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=30V,ID=6.9A,RDS(ON)<32mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
a=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±
V
ID
Continuous Drain Current
-TA=25℃
A
6.9
A
Continuous Drain Current-
TA=70℃
A
5.8
Pulsed Drain Current
B
30
PD
Power Dissipation
2
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
Max
Units
RƟJL
Maximum Junction-to-Lead
60
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
110
12
G2
D1
D1
D2
D2
S1
G1
S2
STS2DNF30L


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