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SSG4530C Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza SSG4530C
Descripción Electrónicos  N-Channel and P-Channel MOSFET use advanced trench technology
PDF  8 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SSG4530C Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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4 —
tf
Fall Time
---
9.5
---
ns
Qg
Total Gate Charge
VGS=-10V, VDS=-15V,
ID=-6A
---
18.5
---
nC
---
9.6
---
Qgs
Gate-Source
Charge
---
2.7
---
nC
Qgd
Gate-Drain “Miller” Charge
---
4.5
---
nC
Drain-Source Diode Characteristics
Qrr
Reverse Recovery Charge
---
8.8
---
NC
Trr
20
N-Typical Characteristics： (T
C=25℃ unless otherwise noted)
nC
---
---
IF=-6A
dI/dt=100A/μs
IF=-6A
dI/dt=100A/μs
Body Diode Reverse Recovery
Time
Notes:
A:The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C. The value in any a given application depends on the user's
specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C.The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient.
D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5%
max.
E.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The SOA curve provides a single pulse rating.
SSG4530C



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