HM730F datasheet(2/8 Pages) HMSEMI

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Electrical Characteristics T

C = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 14 mH, IAS = 6.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width

≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

400

∆BV

DSS

∆T

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

0.6

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 400 V, VGS = 0 V

µA

VDS = 320 V, TC = 125°C

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2.0

4.0

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 3.0 A

0.83

1.0

Ω

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

520

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 200 V, ID = 6.0A,

RG = 25 Ω

(Note 4, 5)

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS = 320 V, ID = 6.0 A,

VGS = 10 V

(Note 4, 5)

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

8.5

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

6.0

ISM

Maximum Pulsed Drain-Source Diode Forward Current

24.0

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 6.0 A

1.5

trr

Reverse Recovery Time

VGS = 0 V, IS = 6.0 A,

dIF / dt = 100 A/µs

(Note 4)

250

Qrr

Reverse Recovery Charge

2.0

µC

HM730 / HM730F

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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