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HM53XXA/BPR Datasheet(PDF) 6 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No. de pieza HM53XXA/BPR
Descripción Electrónicos  35V, 1.6關A ultra-low quiescent current, 200mA, low dropout linear regulator
PDF  15 Pages
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Fabricante Electrónico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de inicio  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM53XXA/BPR Datasheet(HTML) 6 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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应用说明
功耗计算
内置功率管的功耗 PD（MOSFET）=(VIN-VOUT)*IOUT
芯片整体功耗
PD(TOTAL)=PD(MOSFET)+VIN*IGND
静态电流 IGND 为 1.6uA，VIN*IGND 功耗可忽略不计，因此最坏情况的功耗为：
PD(max)=[VIN(max)-VOUT(min)]*IOUT
结温
TJ=PD(max)*θJA+TA
式中θJA 表示封装热阻，TA 表示环境温度。
Page 6
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
35V，1.6μA 超低静态电流，200mA，低压差线性稳压器
HM53XXA/B



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