AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Nov 14, 2005

1/8

Features

- Lower On-Resistance

- Simple Drive Requirement

- Fast Switching Performance

- Pb Free Plating Product

Product Summary

CH

N

30

28

6.9

P

-30

55

-5.3

Pin Assignments

SO-8

5

6

7

8

4

3

2

1

D1

D1

D2

D2

S1

G1

S2

G2

General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, low on-resistance and

costeffectiveness.

The SO-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applicat ions such as DC/DC

converters.

Pin Descriptions

Pin Name

Description

S1

Source (NMOS)

G1

Gate (NMOS)

D1

Drain (NMOS)

S2

Source (PMOS)

G2

Gate (PMOS)

D2

Drain (PMOS)

Ordering information

A X 8510C X X

PN

Package

Feature

F :MOSFET

S: SOP-8

Packing

Blank : Tube or Bulk

A : Tape & Reel