UTT4425L-S08-R datasheet(3/9 Pages) VBSEMI

No. de pieza	UTT4425L-S08-R

Descripción Electrónicos	P-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

Logo

3 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 4 V

VGS =3 V

VGS = 2 V

0.005

0.010

0.015

0.020

0.025

0.030

1020

304050

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

1224

3648

ID =10A

Qg - Total Gate Charge (nC)

DS =10 V

DS =15 V

VDS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

012345

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

800

1600

2400

3200

4000

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

ID = - 10 A

VGS = - 10 V

VGS = - 4.5 V

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

UTT4425L-S08-R

UTT4425L-S08-R Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

UTT4425L-S08-R Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL