UTT4407G-S08-R datasheet(3/9 Pages) VBSEMI

No. de pieza	UTT4407G-S08-R

Descripción Electrónicos	P-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

Logo

3 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

VGS =4 V

VGS =3 V

0.00

0.01

0.02

0.03

0.04

0.05

102030

405060

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

10203040

ID =10A

Qg - Total Gate Charge (nC)

VDS =10 V

VDS =20 V

VDS =15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1234

VGS - Gate-to-Source Voltage (V)

VGS = 125 °C

VGS = 25 °C

VGS = - 55 °C

Crss

600

1200

1800

2400

3000

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

VGS =- 10 V

ID =10A

VGS = - 4.5 V

UTT4407G-S08-R

E-mail：China@VBsemi TEL:86-755-83251052

UTT4407G-S08-R Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

UTT4407G-S08-R Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL