UT70P03L-TN3-R datasheet(3/8 Pages) VBSEMI

No. de pieza	UT70P03L-TN3-R

Descripción Electrónicos	P-Channel 30 V (D-S) MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

100

150

200

250

02468

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 6 V

5 V

3 V

4 V

ID - Drain Current (A)

125 °C

120

150

20406080

100

25 °C

TC = - 55 °C

2000

4000

6000

8000

10 000

12 000

VDS - Drain-to-Source Voltage (V)

Ciss

Coss

Crss

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

120

160

200

0123456

VGS - Gate-to-Source Voltage (V)

25 °C

125 °C

TC = - 55 °C

0.006

0.012

0.018

0.024

0.030

0.036

20406080

100

120

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

100

150

200

250

300

Qg - Total Gate Charge (nC)

VDS = 15 V

ID = 75 A

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UT70P03L-TN3-R

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