UT12N10L-TN3-R datasheet(4/7 Pages) VBSEMI

No. de pieza	UT12N10L-TN3-R

Descripción Electrónicos	N-Channel 100 V (D-S) MOSFET

PDF	7 Pages

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

THERMAL RATINGS

On-Resistance vs. Junction Temperature

0.0

0.1

0.15

0.2

0.25

0.3

- 50

- 25

100

125

150

175

TJ - Junction Temperature (

)

°C

VGS = 10 V

ID = 5 A

Source-Drain Diode Forward Voltage

VSD - Source-to-Drain Voltage (V)

100

0.3

0.6

0.9

1.2

TJ = 25 °C

TJ = 150 °C

Maximum Avalanche Drain Current

vs. Case Temperature

TC - Case Temperature (°C)

100

125

150

175

Safe Operating Area

0.1

Limited by RDS(on)*

TC = 25 °C

Single Pulse

10 ms

100 ms

1 s, DC

100 µs

10 µs

100

1 ms

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (s)

0.1

0.01

10- 4

10- 3

10- 2

10- 1

0.2

0.1

Duty Cycle = 0.5

0.05

0.02

Single Pulse

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UT12N10L-TN3-R

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