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JCS730R-O-R-N-A Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza JCS730R-O-R-N-A
Descripción Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

JCS730R-O-R-N-A Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Note;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
5
10
15
20
0
2
4
6
8
10
12
V
DS = 200V
V
DS = 80V
V
DS = 320V
※ Note : I
D = 6A
Q
G, Total Gate Charge [nC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
µs
DC
10 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C
= 25
o
C
2. T
J = 150
o
C
3. Single Pulse
V
DS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※Notes:
1. V
GS = 0 V
2. I
D = 250
μ A
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V
GS = 10 V
2. I
D = 3 A
T
J, Junction Temperature [
o
C]
25
50
75
100
125
150
0
1
2
3
4
5
6
T
C, Case Temperature [
℃]
JCS730R-O-R-N-A



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