| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
30N06L-TN3-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
|
|||||||||||||||||||||||||||||
30N06L-TN3-R Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
|
3 / 5 page ![]() 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature www.doingter.cn — 3 — trr Reverse Recovery Time 29 --- Ns qrr Reverse Recovery Charge 43 --- nc Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) 2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% , --- --- 30N06L-TN3-R |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |