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25N10L-TN3-R Datasheet(PDF) 5 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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25N10L-TN3-R Datasheet(HTML) 5 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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5 / 5 page ![]() www.doingter.cn — — 5 Figure 11, Safe operation area TC=25 ℃ 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1 ms V DS, Drain-source voltage(V) 10 μs DC 10 ms 100 μs R DS(ON) Limited 10-5 10-4 10-3 10-2 10-1 100 0.01 0.1 1 10 tp Pulse width(s) D= tp/T D= 1 0.5 0.2 0.1 0.05 Single Pulse 0.01 0.02 Figure 12, Max. transient thermal impedance 25N10L-TN3-R 0086-0755-8278-9056 |
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