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LM3019 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM3019 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page  V(BR)DSS RDS(on)MAX ID SOT-523 1. GATE 2. SOURCE 3. DRAIN FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION Load Switch for Portable Devices DC/DC Converter Equivalent Circuit MARKING Gate Source (Top View) MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage V VGS Gate-Source voltage 20 V ID Drain Current mA PD Power Dissipation 150 mW RθJA Thermal Resistance from Junction to Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ 2 3 1 200mA 3Ω@10V 4 Ω@5V 50 V TD 200 50 N-Channel Enhancement Mode Power MOSFET LM3019 Rev 2.0 : www.leiditech.com 12.01.2019 1/3 |
Número de pieza similar - LM3019 |
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Descripción similar - LM3019 |
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