LM4902 datasheet(1/6 Pages) LEIDITECH

No. de pieza	LM4902

Descripción Electrónicos	N-Channel Super Trench Power MOSFET

PDF	6 Pages

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Fabricante Electrónico	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

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General Description

These N-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching

applications.

Features

VDS

40V

ID

(at VGS=10V)

200A

RDS(ON) (at VGS=10V)

2.5mΩ(Max)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

TC=25°C

I

D

200

A

TC=100°C

I

D

1

26

A

Maximum Power Dissipation

P

D

184

W

Single pulse avalanche energy

EAS

3

90

mJ

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

1.1

℃

/W

Thermal Resistance unction-to-Ambient

R

θJA

62

℃

/W

S

D

G

S

G

DS

TO220

TO263

G

D

S

LM4902

Super Trench Power MOSFET

N-Channel

Rev :

www.leiditech.com

01.06.2018

1/6

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LM4902 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM4902 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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