LM4148 datasheet(1/5 Pages) LEIDITECH

No. de pieza	LM4148

Descripción Electrónicos	P-Channel Trench MOSFET

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Fabricante Electrónico	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

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General Description

These P-Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching

applications.

Features

VDS

ID

(at VGS=-10V)

RDS(ON) (at VGS=-10V)

RDS(ON) (at VGS=-4.5V)

-40V

-

18A

5.6mΩ(Typ)

7.3mΩ(Typ)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

TC=25°C

I

D

-

18

A

TC=100°C

I

D

-

11

A

Drain Current – Pulsed

IDM

-

72

A

Maximum Power Dissipation

P

D

4.3

W

Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance junction-case

R

θJc

1.1

℃

/W

Thermal Resistance

junction-to-Ambient

R

θJA

62

℃

/W

D

G

S

D D

S G

S S

SOP8

LM4148

Trench MOSFET

P-Channel

Rev :

www.leiditech.com

01.06.2018

1/5

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LM4148 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM4148 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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