LM04P021 datasheet(1/6 Pages) LEIDITECH

No. de pieza	LM04P021

Descripción Electrónicos	P-ChannelTrench MOSFET

PDF	6 Pages

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Fabricante Electrónico	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Página de inicio	http://www.leiditech.com

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Device Marking and Package Information

Device

Package

Marking

LM04P021

SOP-8

FEATURES

⚫

Super Low Gate Charge

⚫

RoHS compliant

⚫

Green Device Available

⚫

Excellent CdV/dt effect decline

⚫

Advanced high cell density Trench technology

APPLICATIONS

⚫

Switch Mode Power Supply (SMPS)

⚫

Uninterruptible Power Supply (UPS)

⚫

Power Factor Correction (PFC)

Absolute Maximum Ratings

at Tj= 25ºC unless otherwise noted

Parameter

Symbol

Value

Unit

Drain-Source Voltage (VGS = 0V)

VDSS

-40

V

Continuous Drain Current

(note1)

ID

-8.0

A

Pulsed Drain Current

(note2)

IDM

-32

A

Gate Source Voltage

VGSS

±

20

V

Power Dissipation TA = 25ºC

(note4)

PD

3.5

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55~+175

ºC

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-Ambient

(note1)

RθJA

42

K/W

LM04P021

Trench MOSFET

P-Channel

Rev :

www.leiditech.com

01.06.2018

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LM04P021 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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