RJK0393DPA datasheet(1/7 Pages) VBSEMI

No. de pieza	RJK0393DPA

Descripción Electrónicos	N-Channel 30-V (D-S) MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

Logo

1 / 7 page

N-Channel 30-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2011/65/EU

APPLICATIONS

•

OR-ing

•

Server

•DC/DC

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under steady state conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a, e

Qg (Typ)

30

0.00

7 at VGS = 10 V

1 nC

0.0

09at VGS = 4.5 V

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

A

TC = 70 °C

45

TA = 25 °C

.8b, c

TA = 70 °C

1

5b, c

Pulsed Drain Current

IDM

210

Avalanche Current Pulse

L = 0.1 mH

IAS

3

9

Single Pulse Avalanche Energy

EAS

94.8

mJ

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60a, e

A

TA = 25 °C

3.03b, c

Maximum Power Dissipation

TC = 25 °C

PD

155a

W

TC = 70 °C

105

TA = 25 °C

3.25b, c

TA = 70 °C

2.13b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambientb, d

t

 10 sec

RthJA

32

40

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.5

0.6

8

3

6

0

6

0

2

0

4

DFN5X6 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

RJK0393DPA

1

Número de pieza similar - RJK0393DPA

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	RJK0393DPA	115Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	RJK0393DPA	99Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	RJK0393DPA	108Kb / 7P	N Channel Power MOS FET High Speed Power Switching
	RJK0393DPA-00-J53	115Kb / 7P	Silicon N Channel Power MOS FET Power Switching
	RJK0393DPA-00-J53	99Kb / 7P	Silicon N Channel Power MOS FET Power Switching

More results

Descripción similar - RJK0393DPA

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET 23-Nov-98
	SI1304BDL	123Kb / 7P	N-Channel 30-V (D-S) MOSFET 03-Oct-05
	SI1426DH	71Kb / 5P	N-Channel 30-V (D-S) MOSFET 18-Feb-02
	SI2316BDS	107Kb / 6P	N-Channel 30-V (D-S) MOSFET 02-Jul-07
	SI3424BDV	144Kb / 7P	N-Channel 30-V (D-S) MOSFET 24-Dec-07
	SI3454CDV	144Kb / 7P	N-Channel 30-V (D-S) MOSFET 26-May-08
	SI3456CDV	138Kb / 7P	N-Channel 30-V (D-S) MOSFET 04-Feb-08
	SUM90N03-2M2P	136Kb / 6P	N-Channel 30-V (D-S) MOSFET 10-Sep-07
Guangdong Kexin Industr...	KI2304DS	49Kb / 2P	N-Channel 30-V (D-S) MOSFET
Guangdong Kexin Industr...	KI1304BDL	71Kb / 2P	N-Channel 30-V (D-S) MOSFET

More results

RJK0393DPA Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

RJK0393DPA Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

Número de pieza similar - RJK0393DPA

Descripción similar - RJK0393DPA

Html Pages

1 2 3 4 5 6 7

Datasheet Descarga

Enlace URL